PTAC260302SC Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC260302SC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10
µA
On-State Resistance
(main) V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.8
—
Ω
On-State Resistance
(peak) V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.6
—
Ω
Operating Gate Voltage (main) V_DS = 28 V, I_DQ = 0.085 A
V_GS
—
2.7
—
V
Operating Gate Voltage (peak) V_DS = 28 V, I_DQ = 0 A
V_GS
—
1.2
—
V
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE 70°C, 30 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_θJC
Value
65
–6 to +10
0 to +32
200
–65 to +150
1.67
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTAC260302SC V1 R250
Order Code
PTAC260302SCV1R250XTMA1
Package and Description
H-37248H-4 – Ceramic open-cavity, earless
flange, formed leads
Shipping
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2013-08-28