 English |
|
|
|
|
|
|
|
| IRFR3710ZPBF Datasheet, PDF (2/13 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
| |||
| ◁ |
IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Min. Typ.
100 âââ
âââ 0.088
âââ 15
2.0 âââ
39 âââ
IDSS
Drain-to-Source Leakage Current
âââ âââ
âââ âââ
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ
âââ
Qg
Total Gate Charge
âââ 69
Qgs
Gate-to-Source Charge
âââ 15
Qgd
Gate-to-Drain (âMillerâ) Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 25
âââ 14
âââ 43
âââ 53
âââ 42
LD
Internal Drain Inductance
âââ 4.5
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 7.5
âââ 2930
âââ 290
âââ 180
âââ 1200
âââ 180
âââ 430
Max.
âââ
âââ
18
4.0
âââ
20
250
200
-200
100
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mïï ï ï VGS = 10V, ID = 33A ï
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 33A
µA VDS = 100V, VGS = 0V
VDS = 100V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
ID = 33A
nC VDS = 80V
VGS = 10V ï
VDD = 50V
ns
ID = 33A
RG = 6.8ï
VGS = 10V ï
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 56
âââ âââ 220
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
âââ âââ 1.3
âââ 35 53
âââ 41 62
V TJ = 25°C,IS = 33A,VGS = 0V ïï
ns TJ = 25°C ,IF = 33A, VDS = 50V
nC di/dt = 100A/µs ïï
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
ï starting TJ = 25°C, L = 0.28mH, RG = 25ï, IAS = 33A,VGS =10V. Part not recommended for use above this value.
ï Pulse width ï£ï 1.0ms; duty cycle ï£ 2%.
ï Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
ï
ï Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
ï This value determined from sample failure population. 100% tested to this value in production.
ïï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
ï Refer to D-Pak package for Part Marking, Tape and Reel information
2
2016-5-31
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese