IRFR3710ZPBF Datasheet, PDF (1/13 Pages) International Rectifier – AUTOMOTIVE MOSFET

Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to T_jmax
 Multiple Package Options
 Lead-Free
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
I_D
100V
18m
42A
D
D
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
S
S
G
GD
D- Pak
IRFR3710ZPbF
I- Pak
IRFU3710ZPbF
I-Pak Lead form 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
G
Gate
D
Drain
S
Source
Base part number
IRFU3710ZPbF
IRFR3710ZPbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU3710ZPbF
IRFR3710ZPbF
IRFR3710ZTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
E_{AS (Tested )}
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R_JC
R_JA
R_JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
1
2016-5-31