|
IRF7805PBF Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET® Chip-Set for DC-DC Converters | |||
|
◁ |
IRF7805PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage ï
Static Drain-to-Source On-Resistance ï
Gate Threshold Voltage ï
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 9.2 11 mïï ï ï VGS = 4.5V, ID = 7.0A ïï
1.0 âââ 3.0 V VDS = VGS, ID = 250µA
âââ âââ 70
VDS = 30V, VGS = 0V
âââ âââ 10 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V,VGS = 0V,TJ = 100°C
âââ
âââ
âââ 100
âââ -100
nA
VGS = 12V
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge ï
Qgs1
Pre -Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qsw
Switch Charge (Qgs2 + Qgd) ï
Qoss
Output Charge ï
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Diode Characteristics
âââ 22 31
âââ 3.7 âââ
VGS = 5.0V
âââ 1.4 âââ nC VDS = 16V
âââ 6.8 âââ
ID = 7.0A
âââ 8.2 11.5
âââ 30 36 nC VDS = 16V, VGS = 0V
0.5 âââ 1.7 ï
âââ 16 âââ
VDD = 16V,VGS = 4.5V ï
âââ
âââ
20
38
âââ
âââ
ns
ID = 7.0A
RG = 2ïï
âââ 16 âââ
Resistive Load
Parameter
IS
Continuous Source Current
(Body Diode)ï
ISM
Pulsed Source Current
(Body Diode)ï ï
VSD
Diode Forward Voltageï
Min.
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
Max. Units
Conditions
2.5
106
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.2 V TJ = 25°C,IS = 7.0A,VGS = 0V ï
Qrr
Reverse Recovery Charge ï
Qrr
Reverse Recovery Charge ï
âââ
88
âââ
di/dt = 700A/µs
nC VDS =16V, VGS= 0V, IS= 7.0A ï
âââ 55 âââ
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A ï
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature.
ï Pulse width ï£ï 300µs; duty cycle ï£ 2%.
ï When mounted on 1" in square copper board, t < 10 sec.
ï Typ = measured - QOSS
ï
Rï± is measured at TJ of approximately 90°C.
ï Devices are 100% tested to these parameters.
2
2016-8-23
|
▷ |