IRF7805PBF Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET® Chip-Set for DC-DC Converters

 N Channel Application Specific MOSFETs
 Ideal for Mobile DC-DC Converters
 Low Conduction Losses
 Low Switching Losses
 Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make this device ideal
for high efficiency DC-DC Converters that power the
latest generation of mobile microprocessors.
The IRF7805PbF offers maximum efficiency for mobile
CPU core DC-DC converters.
IRF7805PbF
HEXFET^® Chip-Set for DC-DC Converters
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
IRF7805PbF
Devices Features
V_DSS
R_DS(on)
Qg
Q_SW
Q_OSS
IRF7805PbF
30V
11m
31nC
11.5nC
36nC
G
Gate
D
Drain
S
Source
Base part number Package Type
IRF7805PbF
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7805PbF
Symbol
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation 
Maximum Power Dissipation 
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
Parameter
R_JL
Junction-to-Drain Lead
R_JA
Junction-to-Ambient 
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2016-8-23