English
Language : 

IRF7805PBF-1 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – HEXFET® Chip-Set for DC-DC Converters
IRF7805TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage 
Static Drain-to-Source On-Resistance 
Gate Threshold Voltage 
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 ––– ––– V VGS = 0V, ID = 250µA
––– 9.2 11 mVGS = 4.5V, ID = 7.0A 
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 70
VDS = 30V, VGS = 0V
––– ––– 10 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V,VGS = 0V,TJ = 100°C
–––
–––
––– 100
––– -100
nA
VGS = 12V
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge 
Qgs1
Pre -Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qsw
Switch Charge (Qgs2 + Qgd) 
Qoss
Output Charge 
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Diode Characteristics
––– 22 31
––– 3.7 –––
VGS = 5.0V
––– 1.4 ––– nC VDS = 16V
––– 6.8 –––
ID = 7.0A
––– 8.2 11.5
––– 30 36 nC VDS = 16V, VGS = 0V
0.5 ––– 1.7 
––– 16 –––
VDD = 16V,VGS = 4.5V 
–––
–––
20
38
–––
–––
ns
ID = 7.0A
RG = 2
––– 16 –––
Resistive Load
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max. Units
Conditions
2.5
106
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.2 V TJ = 25°C,IS = 7.0A,VGS = 0V 
Qrr
Reverse Recovery Charge 
Qrr
Reverse Recovery Charge 
–––
88
–––
di/dt = 700A/µs
nC VDS =16V, VGS= 0V, IS= 7.0A 
––– 55 –––
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A 
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width 300µs; duty cycle  2%.
 When mounted on 1" in square copper board, t < 10 sec.
 Typ = measured - QOSS
 R is measured at TJ of approximately 90°C.
 Devices are 100% tested to these parameters.
2
2016-08-23