IPP023N04NG Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
IPP023N04N G
IPB023N04N G
Value
Unit
167
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
SMD version, device on PCB
R _thJA minimal footprint
-
6 cm² cooling area⁴⁾
-
-
0.9 K/W
-
62
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
40
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=95 µA
2
-
Zero gate voltage drain current
I _DSS
V _DS=40 V, V _GS=0 V,
T _j=25 °C
-
0.1
-V
4
1 µA
V _DS=40 V, V _GS=0 V,
T _j=125 °C
-
10
100
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
10
100 nA
Drain-source on-state resistance^{5) R} DS(on) ^V GS^{=10 V, I} D^{=90 A}
-
1.9
2.3 mΩ
Gate resistance
R_G
-
1.9
-Ω
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=90 A
75
150
-S
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
5) _{Measured from drain tab to source pin}
Rev. 1.2
page 2
2009-12-11