IPP023N04NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• MOSFET for ORing and Uninterruptible Power Supply
• Qualified according to JEDEC¹⁾ for target applications
• N-channel
• Normal level
• Ultra-low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
Type
IPB023N04N G
IPP023N04N G
IPP023N04N G
IPB023N04N G
40 V
2.3 mΩ
90 A
Package
Marking
PG-TO263-3
023N04N
PG-TO220-3
023N04N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=90 A, R _GS=25 Ω
Value
Unit
90
A
90
400
90
150
mJ
±20
V
Rev. 1.2
page 1
2009-12-11