IPD85P04P4-07 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

IPD85P04P4-07
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
-
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
1.7 K/W
-
-
62
-
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V _(BR)DSS V _GS=0V, I _D= -1mA
-40
-
-V
V _GS(th) V _DS=V _GS, I _D=-150µA -2.0
-3.0
-4.0
I _DSS
V _DS=-32V, V _GS=0V,
T _j=25°C
-
-0.05
-1 µA
V _DS=-32V, V _GS=0V,
T _j=125°C²⁾
-
-20 -200
I _GSS
V _GS=-20V, V _DS=0V
-
-
-100 nA
R _DS(on) V _GS=-10V, I _D=-85A
-
5.3
7.3 mW
Rev. 1.0
page 2
2011-04-18