IPD85P04P4-07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

OptiMOS^®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD85P04P4-07
Product Summary
V _DS
R _DS(on)
I_D
-40 V
7.3 mW
-85 A
PG-TO252-3-313
Type
IPD85P04P4-07
Package
PG-TO252-3-313
Marking
4P0407
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
I _D,pulse
E _AS
T _C=25°C
I _D=-42.5A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
Unit
-85
A
-61
-340
30
mJ
-85
A
±20
V
88
W
-55 ... +175
°C
55/175/56
2011-04-18