IPD70N03S4L-04 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPD70N03S4L-04
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
minimal footprint
6 cm² cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
2.2 K/W
-
-
62
-
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D= 1 mA
30
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=30 µA
1.0
1.5
2.2
Zero gate voltage drain current
I _DSS
V _DS=30 V, V _GS=0 V,
T _j=25 °C
-
0.01
1 µA
V _DS=30 V, V _GS=0 V,
T _j=125 °C²⁾
-
10
1000
V _DS=18 V, V _GS=0 V,
T _j=85 °C²⁾
-
Gate-source leakage current
I _GSS
V _GS=16 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on) V _GS=4.5 V, I _D=35 A
-
V _GS=10 V, I _D=70 A
-
5
60
1
100 nA
4.9
5.7 mΩ
3.6
4.3
Rev. 2.0
page 2
2007-03-09