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IPD70N03S4L-04 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor | |||
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OptiMOS®-T2 Power-Transistor
Features
⢠N-channel - Enhancement mode
⢠Automotive AEC Q101 qualified
⢠MSL1 up to 260°C peak reflow
⢠175°C operating temperature
⢠Green product (RoHS compliant)
⢠Ultra low Rds(on)
⢠100% Avalanche tested
IPD70N03S4L-04
Product Summary
V DS
R DS(on),max
ID
30 V
4.3 mâ¦
70 A
PG-TO252-3-11
Type
IPD70N03S4L-04
Package
Marking
PG-TO252-3-11 4N03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=70 A
Avalanche current, single pulse
I AS
T C=25 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
A
70
280
57
mJ
70
A
±16
V
68
W
-55 ... +175
°C
55/175/56
Rev. 2.0
page 1
2007-03-09
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