IPB090N06N3G Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

IPB090N06N3 G IPP093N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R _thJC
R _thJA
minimal footprint
6 cm² cooling area⁴⁾
min.
Values
typ.
Unit
max.
-
-
1.6 K/W
-
-
62
-
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
60
V _GS(th) V _DS=V _GS, I _D=34 µA
2
I _DSS
V _DS=60 V, V _GS=0 V,
T _j=25 °C
-
V _DS=60 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=50 A
-
V _GS=10 V, I _D=50 A,
-
(SMD)
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=50 A
28
-
-V
3
4
0.1
1 µA
10
100
1
100 nA
8.0
9.3 mΩ
7.7
9
0.7
-Ω
55
-S
Rev. 1.2
page 2
2010-01-20