IPB090N06N3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
IPB090N06N3 G IPP093N06N3 G
OptiMOS^™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _{DS(on),max (SMD)}
I_D
Type
IPB090N06N3 G IPP093N06N3 G
60 V
9 mΩ
50 A
Package
Marking
PG-TO263-3
090N06N
PG-TO220-3
093N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=50 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
50
A
50
200
43
mJ
±20
V
71
W
-55 ... 175
°C
55/175/56
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 74 A.}
3) _{See figure 3}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.2
page 1
2010-01-20