IDT10S60C_08 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

Parameter
Symbol Conditions
IDT10S60C
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
Thermal resistance,
junction - ambient
R _thJA
leaded
-
-
1.5 K/W
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T _sold
1.6mm (0.063 in.) from
case for 10s
-
-
260 °C
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
Diode forward voltage
V _DC
I _R=0.14 mA
V_F
I _F=10 A, T _j=25 °C
I _F=10 A, T _j=150 °C
600
-
-
1.5
-
1.7
-V
1.7
2.1
Reverse current
I_R
V _R=600 V, T _j=25 °C
-
1.4
140 µA
V _R=600 V, T _j=150 °C
-
5
1400
AC characteristics
Total capacitive charge
Switching time³⁾
Total capacitance
Q_c
V _R=400 V, I _F≤I _F,max,
-
di _F/dt =200 A/µs,
t_c
T _j=150 °C
-
24
- nC
-
<10 ns
C
V _R=1 V, f =1 MHz
-
480
- pF
V _R=300 V, f =1 MHz
-
60
-
V _R=600 V, f =1 MHz
-
60
-
1) _{J-STD20 and JESD22}
2) _{All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.}
3) _{tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and}
di/dt), different from t_rr, which is dependent on T_j, I_LOAD, di/dt. No reverse recovery time constant t_rr due to
absence of minority carrier injection.
4) _{Only capacative charge occuring, guaranteed by design.}
Rev. 2.1
page 2
2008-06-09