IDT10S60C_08 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

2^nd Generation thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾
Product Summary
V _DC
Q_c
I_F
IDT10S60C
600 V
24 nC
10 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT10S60C
Package
PG-TO220-2-2
Marking
I _F=5 A, T _j=25 °C
D10S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
I_F
I _F,RMS
Surge non-repetitive forward current,
sine halfwave
I _F,SM
T _C<140 °C
f =50 Hz
T _C=25 °C, t _p=10 ms
Repetitive peak forward current
I _F,RM
T _j=150 °C,
T _C=100 °C, D =0.1
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
I _F,max
∫i ²dt
V _RRM
T _C=25 °C, t _p=10 µs
T _C=25 °C, t _p=10 ms
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
Mounting torque
dv/ dt V_R=0…480V
P _tot
T _C=25 °C
T _j, T _stg
M3 and M3.5 screws
Rev. 2.1
page 1
Value
10
15
84
39
350
35
600
50
100
-55 ... 175
60
Unit
A
A²s
V
V/ns
W
°C
Ncm
2008-06-09