|
GTVA221701FA_15 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF GaN HEMT | |||
|
◁ |
GTVA221701FA
advance specification
DC Characteristics (measured on wafer prior to packaging)
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
VGS = â8 V, ID = 20 mA
V(BR)DSS
150
â
â
V
Gate Threshold Voltage
VDS = 10 V, ID = 20 mA
VGS(th)
â3.8
â3.0
â2.3
V
n Gate Quiescent Voltage
VDS = 50V, ID = 1.0 A
VGS(Q)
â
â2.8
â
V
o Saturated Drain Current
VDS = 6.0 V, VGS = 2.0 V
IDS
15
18
â
A
t i Maximum Ratings
a Parameter
c Drain-source Voltage
fi Gate-source Voltage
i Operating Voltage
Gate Current
c Drain Current
e Junction Temperature
p Storage Temperature Range
s Thermal Resistance
Symbol
VDSS
VGS
VDD
IG
Id
TJ
TSTG
RqJC
Value
125
â10 to +2
0 to +50
20
7.5
225
â65 to +150
TBD
Unit
V
V
V
mA
A
°C
°C
°C/W
Ordering Information
e Type and Version
c GTVA221701FA V1 R0
a d v a n GTVA221701FA V1 R2
Order Code
TBD
TBD
Package Description
H-37265J-2, earless flange
H-37265J-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Advance Specification
2 of 4
Rev. 01, 2015-07-27
|
▷ |