GTVA221701FA_15 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF GaN HEMT

GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P_3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• Input matched
• Typical Pulsed CW performance, 1805 MHz, 48 V, single side
- Output power at P_3dB = 200 W
- Efficiency = 70%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @48 V, 140 W (CW) output
power
• GaN HEMT technology
• High power density
• High efficiency
• RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single- carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 48 V, I_DQ = 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF
Characteristics
Conditions
Symbol Min
Typ
Max
Unit
Linear Gain
G_ps
—
19
—
dB
Drain Efficiency
ƒ₁ = 1805 MHz, P_OUT = 50 W avg
h_D
—
38
—
%
Adjacent Channel Power Ratio
ACPR
—
–32
—
dBc
Linear Gain
G_ps
—
19
—
dB
Drain Efficiency
ƒ₂ = 2170 MHz, P_OUT = 50 W avg
h_D
—
36
—
%
Adjacent Channel Power Ratio
ACPR
—
–28
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-07-27