DD400S45KL3_B5 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – Technische Information / Technical Information

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DD400S45KL3_B5
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = -40°C
Tvj = 25°C
Tvj = 125°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
Spitzenverlustleistung
Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer
Minimumturn-ontime

VRRM 
IF 
IFRM 
I²t 
PRQM 
ton min 
4500
4500
4500
400
800
65,0
800
10,0
V
A
A
 kA²s
 kW
 µs
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 400 A, - diF/dt = 1650 A/µs (Tvj=125°C) Tvj = 25°C
VR = 2800 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 400 A, - diF/dt = 1650 A/µs (Tvj=125°C) Tvj = 25°C
VR = 2800 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 400 A, - diF/dt = 1650 A/µs (Tvj=125°C) Tvj = 25°C
VR = 2800 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
VF
IRM
Qr
Erec
RthJC
RthCH
min. typ. max.
2,50 3,10 V
2,50 3,00 V
500
A
 570  A
390
µC
 700  µC
590
mJ
 1200  mJ

 51,0 K/kW
 42,0
K/kW
preparedby:MW
approvedby:DTS
dateofpublication:2013-07-29
revision:3.0
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