BUY25CS45B-01 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – HiRel RadHard Power-MOS

Data Sheet BUY25CS45B-01
Electrical Characteristics, at T_A=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
max.
DC Characteristics
Breakdown Voltage Drain to Source
I_D = 0.25mA, V_GS = 0V
B_VDSS
250
Gate Threshold Voltage
I_D = 1.0mA, V_DS ≥ V_GS
V_GS(th)
2.0
Gate to Source Leakage Current
V_DS = 0V, V_GS = +/- 20V
I_GSS
-
Drain Current
V_DS = 200V, V_GS = 0V
I_DSS
-
Drain Source On Resistance ¹⁾
V_GS = 10V, I_D = 29A
r_DS(ON)
-
Source Drain Diode, Forward Voltage ^{1), 2)} V_SD
-
V_GS = 0V, I_S = 45A
-
V
4.0 V
+/-100 nA
25
µA
0.05 Ω
1.4 V
AC Characteristics
Turn-on Delay Time
V_DD = 50% V_DS, I_D = 29A, R_G = 4.7Ω
t_d(ON)
-
50
ns
Rise Time
t_r
V_DD = 50% V_DS, I_D = 29A, R_G = 4.7Ω
-
95
ns
Turn-off Delay Time
V_DD = 50% V_DS, I_D = 29A, R_G = 4.7Ω
t_d(OFF)
-
80
ns
Fall Time
t_f
V_DD = 50% V_DS, I_D = 29A, R_G = 4.7Ω
-
75
ns
Reverse Recovery Time
V_DD < 50% V_DS, I_D = 45A
t_rr
-
600 ns
Common Source Input Capacitance
C_iss
3.5
6.5 nF
V_DS = 100V, V_GS = 0V, f = 1.0MHz
Common Source Output Capacitance
C_oss
V_DS = 100V, V_GS = 0V, f = 1.0MHz
250
400 pF
Common Source
Reverse Transfer Capacitance
V_DS = 100V, V_GS = 0V, f = 1.0MHz
C_rss
5
20
pF
Total Gate Charge
Q_G
-
V_DD = 50% V_DS, V_GS = 10V, I_D = 45A
100 nC
Notes.:
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.
2) Measured within 2.0 mm of case.
IFAG PMM RFS D HIR
2 of 8
Preliminary Mar 2015