BUY25CS45B-01 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – HiRel RadHard Power-MOS

Data Sheet BUY25CS45B-01
HiRel RadHard Power-MOS
 Low R_DS(on)
 Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
4
V_GS = -10V, V_DS = 250V
V_GS = -15V, V_DS = 250V
V_GS = -15V, V_DS = 120V
V_GS = -20V, V_DS = 160V
 Total Ionisation Dose (TID) hardened
100 kRad approved
 Hermetically sealed
 N-channel
1
2
3
Type
BUY25CS45B-01
Marking
-
Pin Configuration
1
2
3
D
S
G
Package
4
Not connected TO-254AA
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Continuous Drain Current
T_C = 25 °C
T_C = 100 °C
Continuous Source Current
Drain Current Pulsed, t_p limited by T_jmax
Total Power Dissipation ¹⁾
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Symbol
V_DS
V_GS
V_DG
I_D
I_S
I_DM
P_tot
T_J
T_op
E_AS
Values
250
+/- 20
250
45
29
45
180
208
-55 to + 150
-55 to + 150
380
Unit
V
V
V
A
A
Apk
W
°C
°C
mJ
Thermal Characteristics
Thermal Resistance (Junction to Case) Rth JC
0.6
Soldering Temperature
T_sol
250
Notes.:
1) For T_S ≤ 25°C. For T_S > 25°C derating is required.
K/W
°C
IFAG PMM RFS D HIR
1 of 8
Preliminary Mar 2015