BSP125 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode)

Rev. 2.1
BSP125
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJS
-
-
25 K/W
R_thJA
-
- 115
-
-
70
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V_(BR)DSS ⁶⁰⁰
-
-V
V_GS=0, I_D=0.25mA
Gate threshold voltage, V_GS = V_DS
I_D=94µA
Zero gate voltage drain current
V_DS=600V, V_GS=0, T_j=25°C
V_DS=600V, V_GS=0, T_j=125°C
Gate-source leakage current
V_GS=20V, V_DS=0
Drain-source on-state resistance
V_GS=4.5V, I_D=0.11A
Drain-source on-state resistance
V_GS=10V, I_D=0.12A
V_GS(th)
1.3
1.9
2.3
I_DSS
I_GSS
µA
-
-
0.1
-
-
5
-
10 100 nA
R_DS(on)
-
26 60 _Ω
R_DS(on)
-
25 45
1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Page 2
2009-08-18