BSP125 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode)

Rev. 2.1
SIPMOS^ Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
• ^{Pb-free lead plating; RoHS compliant}
x Qualified according to AEC Q101
BSP125
Product Summary
V_DS
600 V
R_DS(on) 45 Ω
I_D
0.12 A
PG-SOT223
Type Package RoHS compliant Tape and Reel Information Marking Packaging
BSP125 PG-SOT223 Yes
L6433: 4000 pcs/reel
BSP125 Non dry
BSP125 ^{PG-SOT223 Yes}
L6327: 1000 pcs/reel
BSP125 Non dry
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Continuous drain current
T_A=25°C
T_A=70°C
I_D
0.12
0.1
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
0.48
6
I_S=0.12A, V_DS=480V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
ESD Class (JESD22-A114-HBM)
V_GS
±20
1A (>250V, <500V)
Power dissipation
T_A=25°C, T_A=25
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2009-08-18