BFS483_07 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFS483
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 40 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Symbol
R_thJS
Value
Unit
12
V
20
20
2
65
mA
5
450
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
≤ 245
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 1 V, I_C = 0
DC current gain-
I_C = 15 mA, V_CE = 8 V, pulse measured
V_(BR)CEO 12
-
-V
I_CES
-
-
100 µA
I_CBO
-
-
100 nA
I_EBO
-
-
1 µA
h_FE
70 100 140 -
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2007-04-26
2