BFS483_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• f_T = 8 GHz, F = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated
Transistor in one package
• For orientation in reel see
package information below
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFS483
4
5
6
3
2
1
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS483
Marking
Pin Configuration
RHs _{1=B 2=E 3=C 4=B 5=E}
1_{Pb-containing package may be available upon special request}
6=C
Package
SOT363
2007-04-26
1