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BFR380L3_10 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR380L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 40 mA, VCE = 3 V, pulse measured
V(BR)CEO 6
9
-V
ICES
ICBO
nA
-
1
30
-
- 1000
-
-
30
IEBO
-
10 500
hFE
90 120 160 -
2
2010-05-28
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