BFR380L3_10 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• High current capability and low noise figure for
wide dynamic range
• Low voltage operation
• Ideal for low phase noise oscillators up to 3.5 GHz
• Low noise figure: 1.1 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFR380L3
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR380L3
Marking
Pin Configuration
FC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 96°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
6
15
15
2
80
14
380
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 140
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
1
2010-05-28