BFR35AP Datasheet, PDF(2/3 Page) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

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BFR35AP Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

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Electrical Characteristics

Parameter

Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector -base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain-

IC = 15 mA, VCE = 8 V

BFR35AP

Symbol

Values

Unit

min. typ. max.

V(BR)CEO 15

-V

ICES

10 ÂµA

ICBO

- 100 nA

IEBO

- 100 ÂµA

hFE

40 100 200 -

Aug-01-2001

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