BFR35AP Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

BFR35AP
NPN Silicon RF Transistor
3

For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
2
1 _VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR35AP
Marking
GEs
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
48°C
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
15
20
20
2.5
30
4
280
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
R_thJS
Value

365
Unit
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-01-2001