BFQ19S Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)

BFQ19S
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 2 V, I_C = 0
DC current gain
I_C = 70 mA, V_CE = 8 V
V_(BR)CEO ¹⁵
-
-V
I_CES
-
- 100 µA
I_CBO
-
- 100 nA
I_EBO
-
-
10 µA
h_FE
40 100 220 -
2
Jun-22-2001