BFQ19S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)

NPN Silicon RF Transistor

For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
BFQ19S
1
2
3
2
VPS05162
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFQ19S
FG
1=B
2=C
3=E
SOT89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
85 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
15
20
20
3
75
10
1
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

65
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
W
°C
K/W
1
Jun-22-2001