English
Language : 

BFP540 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
◁
BFP540
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 14 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V
V(BR)CEO 4.5
5
-V
ICES
-
-
10 µA
ICBO
-
-
100 nA
IEBO
-
-
10 µA
hFE
50 110 200 -
2
Jan-28-2004
 ▷