BFP540 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFP540
NPN Silicon RF Transistor
3
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding G_ms = 21 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP540
Marking
Pin Configuration
ATs
1=B 2=E 3=C 4=E -
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 77°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Package
-
SOT343
Value
4.5
14
14
1
80
8
250
Unit
V
mA
mW
150
°C
-65 ... 150
-65 ... 150
Value
≤ 290
Unit
K/W
1
Jan-28-2004