BFP520F Datasheet, PDF (2/3 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

SIEGET
45 BFP520F
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1 V, I_C = 0
DC current gain
I_C = 20 mA, V_CE = 2 V
V_(BR)CEO ^2.5
I_CBO
-
I_EBO
-
h_FE
70
AC characteristics (verified by random sampling)
Transition frequency
I_C = 30 mA, V_CE = 2 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
f_T
-
C_cb
-
C_ce
-
C_eb
-
F
-
I_C = 2 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain, maximum stable ¹⁾
G_ms
-
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
|S₂₁|²
-
I_C = 20 mA, V_CE = 2 V, f = 1.8 GHz,

Z_S = Z_L = 50
Third order intercept point at output²⁾

V_CE = 2 V, f = 1.8 GHz, Z_S=Z_L=50 ,
IP₃
-
I_C = 20 mA
1dB compression point³⁾

V_CE = 2 V, f = 1.8 GHz, Z_S=Z_L=50 ,
P_-1dB
-
I_C = 20 mA
3
-
-
110
45
0.07
0.25
0.31
0.95
23
20.5
23.5
10.5
3.5 V
200 nA
35 µA
200 _-
- GHz
- pF
-
-
- dB
-
- dB
- dBm
-
1_{Gms = |S21 / S12|}
2IP3 _{value depends on termination of all intermodulation frequency components. Termination used for this}

measurement is 50 from 0.1MHz to 6GHz.
3DC _{current at no input power}
2
Dec-07-2001