BFP520F Datasheet, PDF (1/3 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

SIEGET
45 BFP520F
NPN Silicon RF Transistor
Preliminary data

For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G_ms = 23 dB
Noise Figure F = 0.95 dB

For oscillators up to 15 GHz

Transition frequency f_T = 45 GHz

Gold metallization for high reliability

SIEGET
45 - Line
45 GHz f_T - Line
3
2
4
1
TSFP-4
to p v ie w
"
!
APs

d ire c tio n o f u n re e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP520F
APs
1 = B 2 = E 3 = C 4 = E _TSFP-4
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
107°C
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
2.5
10
1
40
4
100
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

430
K/W
1
Dec-07-2001