BFP450 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For medium power amplifiers)

SIEGET
25 BFP450
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1.5 V, I_C = 0
DC current gain
I_C = 50 mA, V_CE = 4 V
V_(BR)CEO 4.5
I_CBO
-
I_EBO
-
h_FE
50
AC characteristics (verified by random sampling)
Transition frequency
I_C = 90 mA, V_CE = 3 V, f = 1 GHz
I_C = 90 mA, V_CE = 3 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
f_T
-
15
C_cb
-
C_ce
-
C_eb
-
F
-
I_C = 10 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain, maximum available ¹⁾
G_ma
-
I_C = 50 mA, V_CE = 2 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
|S₂₁|²
8
I_C = 50 mA, V_CE = 2 V, f = 1.8 GHz,

Z_S = Z_L = 50
Third order intercept point
IP₃
-
I_C = 50 mA, V_CE = 3 V, Z_S=Z_Sopt , Z_L=Z_Lopt ,
f = 1.8 GHz
1dB Compression point
I_C = 50 mA, V_CE = 3 V, f = 1.8 GHz,
Z_S=Z_Sopt , Z_L=Z_Lopt
P_-1dB
-
5
-
-
600
-
100
80 150
24
-
17
-
0.48 0.8
1.2
-
1.75 -
1.25 -
15.5 -
11.5 -
29
-
19
-
Unit
V
nA
µA
-
GHz
pF
dB
dBm
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
2
Aug-20-2001