BFP450 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For medium power amplifiers)

NPN Silicon RF Transistor

For medium power amplifiers

Compression point P_-1dB = +19 dBm at 1.8 GHz
maximum available gain G_ma = 15.5 dB at 1.8 GHz
Noise figure F = 1.25 dB at 1.8 GHz

Transition frequency f_T = 24 GHz

Gold metallization for high reliability

SIEGET ^ 25 GHz f_T - Line
SIEGET
25 BFP450
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP450
Marking
ANs
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
96 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
4.5
15
1.5
100
10
450
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

120
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Aug-20-2001