BF999_07 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Silicon N-Channel MOSFET Triode

BF999
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
I_D = 10 µA, -V_GS = 4 V
V_(BR)DS
20
-
-V
Gate-source breakdown voltage
± I_GS = 10 mA, V_DS = 0
Gate-source leakage current
± V_GS = 5 V, V_DS = 0
Drain current
V_DS = 10 V, V_GS = 0
±V_(BR)GSS 6.5
-
± I_GSS
-
-
I_DSS
5
10
12
50 nA
16 mA
Gate-source pinch-off voltage
V_DS = 10 V, I_D = 20 µA
-V_GS(p)
-
0.8 1.5 V
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Forward transconductance
V_DS = 10 V, I_D = 10 mA
Gate input capacitance
V_DS = 10 V, I_D = 10 mA, f = 10 MHz
Output capacitance
V_DS = 10 V, I_D = 10 mA, f = 10 MHz
Power gain
V_DS = 10 V, I_D = 10 mA, f = 45 MHz
Noise figure
g_fs
C_gss
C_dss
G_p
F
14 20
- mS
-
2.5
- pF
-
0.9
- pF
-
27
- dB
-
2.1
- dB
V_DS = 10 V, I_D = 10 mA, f = 45 MHz
2
2007-04-20