BF999_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon N-Channel MOSFET Triode

Silicon N-Channel MOSFET Triode
• For high-frequency stages up to 300 MHz
preferably in FM applications
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BF999
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF999
Marking
Pin Configuration
LBs
1=G 2=D 3=S -
-
-
Package
SOT23
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate-source peak current
Total power dissipation
T_S ≤ 76 °C
Storage temperature
Channel temperature
Symbol
V_DS
I_D
± I_GSM
P_tot
T_stg
T_ch
Value
20
30
10
200
-55 ... 150
150
Thermal Resistance
Parameter
Symbol
Channel - soldering point²⁾
R_thchs
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 370
Unit
V
mA
mA
mW
°C
Unit
K/W
1
2007-04-20