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BCV29_11 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – For general AF applications
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BCV29, BCV49
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 20
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV29
IC = 10 mA, IB = 0 , BCV49
V(BR)CEO
30
-
60
-
V
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV29
IC = 100 µA, IE = 0 , BCV49
V(BR)CBO
40
-
-
80
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV29
VCB = 60 V, IE = 0 , BCV49
VCB = 30 V, IE = 0 , TA = 150 °C, BCV29
VCB = 60 V, IE = 0 , TA = 150 °C, BCV49
ICBO
µA
-
-
0.1
-
-
0.1
-
-
10
-
-
10
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV29
IC = 100 µA, VCE = 1 V, BCV49
IC = 10 mA, VCE = 5 V, BCV29
IC = 10 mA, VCE = 5 V, BCV49
IC = 100 mA, VCE = 5 V, BCV29
IC = 100 mA, VCE = 5 V, BCV49
IC = 0.5 A, VCE = 5 V, BCV29
IC = 0.5 A, VCE = 5 V, BCV49
IEBO
hFE
-
-
4000 -
2000 -
10000 -
4000 -
20000 -
10000 -
4000 -
2000 -
100 nA
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat
-
-
1V
VBEsat
-
-
1.5
2
2011-10-05
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