BCV29_11 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – For general AF applications

NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCV29, BCV49
1
2
3
2
Type
BCV29
BCV49
Marking
EF
EG
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Collector-base voltage
BCV29
BCV49
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S ≤ 130 °C
Junction temperature
Storage temperature
Pin Configuration
1=B
2=C
3=E
1=B
2=C
3=E
Package
SOT89
SOT89
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Value
Unit
V
30
60
40
80
10
500
mA
800
100
200
1
W
150
°C
-65 ... 150
1
2011-10-05