BCR555E6327HTSA1 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

BCR555
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO ⁵⁰
-
-V
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Collector-base cutoff current
V_CB = 50 V, I_E = 0
Emitter-base cutoff current
V_EB = 5 V, I_C = 0
DC current gain-
I_C = 50 mA, V_CE = 5 V
Collector-emitter saturation voltage¹⁾
I_C = 50 mA, I_B = 2.5 mA
V_(BR)CBO 50
I_CBO
-
I_EBO
-
h_FE
70
V_CEsat
-
-
-
- 100 nA
- 0.65 mA
-
--
-
0.3 V
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on voltage
I_C = 10 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_i(off)
V_i(on)
R₁
R₁/R₂
0.4
-
1
0.5
-
1.4
1.5 2.2 2.9 kΩ
0.19 0.22 0.24 -
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
f_T
- 150 - MHz
1_{Pulse test: t < 300µs; D < 2%}
2
2011-07-28