BCR555E6327HTSA1 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

PNP Silicon Digital Transistor
• Built in bias resistor (R₁= 2.2 kΩ, R₂= 10 kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR555
3
2
1
C
3
R₁
R₂
1
2
B
E
EHA07183
Type
BCR555
Marking
XDs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T_S ≤ 79 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_i(fwd)
V_i(rev)
I_C
P_tot
T_j
T_stg
50
50
20
5
500
330
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
≤ 215
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
1
2011-07-28