BCR555 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR555
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_B = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 5 V, I_C = 0
DC current gain 1)
I_C = 50 mA, V_CE = 5 V
Collector-emitter saturation voltage1)
I_C = 50 mA, I_B = 2.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 10 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_(BR)CEO 50
-
-V
V_(BR)CBO 50
-
-
I_CBO
-
- 100 nA
I_EBO
-
- 0.65 mA
h_FE
70
-
--
V_CEsat
-
-
0.3 V
V_i(off)
0.4
-
1V
V_i(on)
R₁
R₁/R₂
0.5
-
1.4
1.5 2.2 2.9 k

0.19 0.22 0.24 -
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
f_T
-
150
- MHz
1) Pulse test: t < 300
s; D < 2%
2
Jul-23-2001