BCR555 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR555
PNP Silicon Digital Transistor

Switching circuit, inverter, interface circuit,
driver circuit

Built in bias resistor (R₁=2.2k, R₂=10k)
C
3
R₁
R₂
3
2
1 _VPS05161
Type
BCR555
Marking
XDs
1
2
B
E
EHA07183
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 79 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
50
50
5
12
500
330
150
-65 ... 150

215
Unit
V
mA
mW
°C
K/W
1
Jul-23-2001