BCR158_07 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

BCR158...
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR158
BCR158F
BCR158W
Symbol
R_thJS
Value
Unit
K/W
≤ 240
≤ 90
≤ 105
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO 50
-
-V
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
V_(BR)CBO 50
-
-
I_C = 10 µA, I_E = 0
Collector-base cutoff current
I_CBO
-
- 100 nA
V_CB = 40 V, I_E = 0
Emitter-base cutoff current
I_EBO
-
- 164 µA
V_EB = 5 V, I_C = 0
DC current gain²⁾
h_FE
70
-
--
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage²⁾
V_CEsat
-
-
0.3 V
I_C = 10 mA, I_B = 0.5 mA
Input off voltage
V_i(off)
0.4
-
0.8
I_C = 100 µA, V_CE = 5 V
Input on voltage
V_i(on)
0.5
-
1.1
I_C = 2 mA, V_CE = 0.3 V
Input resistor
R₁
1.5 2.2 2.9 kΩ
Resistor ratio
R₁/R₂ 0.042 0.047 0.052 -
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
f_T
-
200
- MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
-
3
- pF
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
2
2007-08-27