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BCR158_07 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BCR158...
BCR158/F
BCR158W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR158
BCR158F
BCR158W
Marking
Pin Configuration
WIs 1=B 2=E 3=C -
-
-
WI
1=B 2=E 3=C -
-
-
WIs 1=B 2=E 3=C -
-
-
Package
SOT23
TSFP-3
SOT323
1Pb-containing package may be available upon special request
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR158, TS ≤ 102°C
BCR158F, TS ≤ 128°C
BCR158W, TS ≤ 124°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
Vi(fwd)
Vi(rev)
IC
Ptot
Tj
Tstg
Value
Unit
50
V
50
20
5
100
mA
mW
200
250
250
150
°C
-65 ... 150
1
2007-08-27