BCR101 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR101...
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR101F
BCR101L3
BCR101T
Symbol
R_thJS
Value
Unit
K/W
≤ 90
≤ 60
≤ 165
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO 50
-
-V
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
V_(BR)CBO 50
-
-
I_C = 10 µA, I_E = 0
Collector-base cutoff current
I _CBO
-
- 100 nA
V_CB = 40 V, I_E = 0
Emitter-base cutoff current
I _EBO
-
-
75 µA
V_EB = 10 V, I_C = 0
DC current gain²⁾
I_C = 5 mA, V_CE = 5 V
h_FE
70
-
--
Collector-emitter saturation voltage²⁾
V_CEsat
-
-
0.3 V
I_C = 5 mA, I_B = 0.25 mA
Input off voltage
V_i(off)
0.5
-
1.8
I_C = 100 µA, V_CE = 5 V
Input on voltage
V_i(on)
1
-
3
I_C = 1 mA, V_CE = 0.3 V
Input resistor
R₁
70 100 130 kΩ
Resistor ratio
R₁/R ₂
0.9
1
1.1 -
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
100
- MHz
C_cb
-
3
- pF
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
2Pulse _{test: t < 300µs; D < 2%}
2
Nov-27-2003