BCR101 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R₁ = 100kΩ , R₂ = 100kΩ )
BCR101...
BCR101F/L3
BCR101T
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR101F*
BCR101L3*
BCR101T*
*Preliminary
Marking
UCs 1=B
UC
1=B
UCs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR101F, T_S ≤ 128°C
BCR101L3, T_S ≤ 135°C
BCR101T, T_S ≤ 109°C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
1
Package
-
TSFP-3
-
TSLP-3-4
-
SC75
Value
Unit
50
V
50
10
50
50
mA
mW
250
250
250
150
°C
-65 ... 150
Nov-27-2003