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| BC857BL3 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – PNP Silicon AF Transistors | |||
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BC857BL3, BC858BL3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC857BL3
IC = 10 mA, IB = 0 , BC858BL3
V(BR)CEO
45
-
30
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC857BL3
IC = 10 µA, IE = 0 , BC858BL3
V(BR)CBO
50
-
-
30
-
-
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 , BC857BL3
IC = 10 µA, VBE = 0 , BC858BL3
V(BR)CES
50
-
-
30
-
-
Emitter-base breakdown voltage
IE = 0 , IC = 1 µA
V(BR)EBO 5
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
nA
-
-
15
-
-
5
DC current gain-
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base emitter saturation voltage-1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage-1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
hFE
-
- 250 -
220 290 475
VCEsat
mV
-
75 300
- 250 650
VBEsat
- 700 -
- 850 -
VBE(ON)
600 650 750
-
- 820
2
Jan-30-2004
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